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| Product Description Sirenza Microdevices' SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-389B SXA-389BZ Pb RoHS Compliant & Green Package 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias Product Features * Now Available in Leed Free, RoHS Compliant, & Green Packaging * Lower Rth for increased MTTF 108 hrs. at TLead = 85C * On-chip Active Bias Control, Single 5V Supply * Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz * High P1dB : +25 dBm typ. * High Gain: +18.5 dB at 850 MHz * Efficient: consumes only 575 mW Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz OIP3 P1dB Gain dBm Applications 2450 MHz * W-CDMA, PCS, Cellular Systems * Multi-Carrier Applications Symbol Parameters: Test C onditions: Z0 = 50 Ohms, Ta = 25C f f f f f f f f f f f f f f f f f f f f = = = = = = = = = = = = = = = = = = = = 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz 850 MHz 1960 MHz 2140 MHz 2450 MHz U nits Min. Typ. 25 25 25 25 18.4 13.6 13.5 12.8 1.2:1 1.3:1 1.2:1 1.2:1 41 43 42 41 4.5 4.8 5.0 5.7 Max. P 1dB Output Power at 1dB C ompressi on dB m 24 S 21 Small si gnal gai n dB 12.5 15 S11 Input VSWR - 2.0:1 OIP3 Output Thi rd Order Intercept Poi nt (Pout/Tone = +11 dBm, Tone spaci ng = 1 MHz) dB m 39 NF Noi se Fi gure dB 6.3 ID PDISS Rth, j-l D evi ce C urrent Operati ng D i ssi pated Power Thermal Resi stance (juncti on - lead) V cc = 5 V mA mW C /W 90 115 575 70 135 The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2003 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 1 SXA-389B 1/4 W GaAs HBT Amplifier Note: Tuned for Output IP3 850 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 24 25C 22 20 0.8 0.85 GHz dB Gain vs. Frequency 20 18 16 14 85C -40C dBm 12 10 25C 85C -40 C 0.9 0.95 0.8 0.85 GHz 0.9 0 .9 5 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -10 -15 -20 -25 -30 -35 -40 0 .8 0.8 5 GHz dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 43 41 39 S 11 S 12 S 22 37 35 25 C 85 C -4 0C 0.9 0 .9 5 0 .8 0.8 5 GHz 0.9 0 .95 45 43 41 39 37 35 0 Third Order Intercept vs. Tone Power Frequency = 850 MHz -4 0 Adjacent Channel Power (dBc) 880 MHz Adjacent Channel Power vs. Channel Output Power -4 5 -5 0 -5 5 -6 0 -6 5 -7 0 -7 5 25C 85C -4 0 C 10 12 14 16 18 20 25C 85C -40C dBm 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 2 SXA-389B 1/4 W GaAs HBT Amplifier Note: Tuned for Output IP3 1960 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 24 22 20 1 .9 3 2 5C 8 5C -40C 1 .94 1.95 1.9 6 GHz dB Gain vs. Frequency 20 18 16 14 12 10 1.93 25C 85C -40C dBm 1 .97 1.98 1.9 9 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -10 dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 S11 S12 S22 dBm 43 41 39 -15 -20 -25 -30 1 .93 37 35 1.93 25C 85C -40C 1 .94 1.9 5 1.9 6 GHz 1.9 7 1 .9 8 1 .9 9 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 47 45 43 dBm 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 Adjacent Channel Power (dBc) 25C 85C -40C -45 -50 -55 -60 -65 -70 -75 25C 85C -40C 10 12 14 16 18 20 41 39 37 35 0 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 3 SXA-389B 1/4 W GaAs HBT Amplifier Note: Tuned for Output IP3 2140 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 dB Gain vs. Frequency 20 25C 18 16 14 85C -40C dBm 24 25C 22 20 2.11 85C -40C 2.12 2.13 2.14 GHz 12 10 2.11 2.15 2.16 2.17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 S11 -5 -10 -15 -20 -25 -30 2 .11 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 S12 S22 43 41 39 25C 37 35 2.11 85C -40C dB 2 .12 2 .13 2 .14 GHz 2 .15 2 .16 2 .17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 Third Order Intercept vs. Tone Power Frequency = 2.14 GHz 45 Adjacent Channel Power (dBc) 2140 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 25C 85C -40C 10 12 14 16 18 43 41 39 25C 37 35 0 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) dBm 85C -40C Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 4 SXA-389B 1/4 W GaAs HBT Amplifier Note: Tuned for Output IP3 2450 MHz Application Circuit Data, VCC= 5V, ID= 115mA P1dB vs. Frequency 30 28 26 24 22 20 2.4 2.42 2.44 GHz dB Gain vs. Frequency 20 18 16 14 25C 85C -40C 25C 85C -40C dBm 12 10 2.46 2.48 2.5 2.4 2.42 2.44 GHz 2.46 2.48 2.5 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 S 11 -5 -10 dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 45 25C 43 41 39 37 35 85C -40C dBm S 12 S 22 -15 -20 -25 -30 -35 2.4 2.42 2.44 GHz 2.46 2.48 2.5 2.4 2.42 2.44 GHz 2.46 2.48 2.5 Third Order Intercept vs. Tone Power Frequency = 2.45 GHz 45 25C 43 41 39 37 35 0 2 4 6 8 10 12 14 16 18 POUT per tone (dBm) 85C -40C 303 S. Technology Court, Broomfield, CO 80021 dBm Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 5 SXA-389B 1/4 W GaAs HBT Amplifier Application Schematic for 850 MHz, 2450 MHz Vc c C1 C2 C3 L1 C4 C7 Z=50 , EL1 Z=50 , EL3 R F in R F o ut C5 C6 Ref. Des. Vendor Series Matsuo 267M3502104K Rohm MCH18 850 MHz 0.1uF 10% 1000pF 5% 47pF 5% 47pF 5% 5.6pF 0.25pF 2450 MHz 0.1uF 10% 1000pF 5% 22pF 5% 1.2pF 0.25pF - Ref. Des. Vendor Series Rohm MCH18 850 MHz 3.9pF 0.25pF 1 33nH 5% 15 2450 MHz 1.0pF 0.25pF 2 15nH 5% 76 C1 C6 C2 C6 Position C 3, C 7 Rohm MCH18 L1 Toko LL1608-FS C4 Rohm MCH18 E L1 C5 Rohm MCH18 E L3 7.2 31.5 Evaluation Board Layout for 850 MHz, 2450 MHz RFin C1 C2 C3 L1 + RFout C4 C7 C5 1 2 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 6 SXA-389B 1/4 W GaAs HBT Amplifier Application Schematic for 1960 MHz, 2140 MHz Vc c C1 C2 C3 L1 C4 C7 Z=50 , E L1 Z=50 , EL3 R F in R F o ut C6 Ref. Des. Vendor Series Matsuo 267M3502104K Rohm MCH18 1960/2140 MHz 0.1uF 10% 1000pF 5% 22pF 5% 2.2pF 0.25pF - Ref. Des. Vendor Series Rohm MCH18 1960/2140 MHz 1.0pF 0.25pF 18nH 5% 35 C1 C6 C2 L1 Toko LL1608-FS C 3, C 7 Rohm MCH18 E L1 C4 C5 Rohm MCH18 Rohm MCH18 E L3 30 Evaluation Board Layout for 1960 MHz, 2140 MHz RFin C1 C2 C3 L1 + RFout Jumper C4 C7 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 7 SXA-389B 1/4 W GaAs HBT Amplifier Part Number Ordering Information Absolute Maximum Ratings Parameter Max. Supply Current (ID) Max. Device Voltage (VCC) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 240 mA 6.0 V 1500 mW 100 mW +165 C -40 to +85 C +150 C Part Number SXA-389B SXA-389BZ Devices Per Reel 1000 1000 Reel Size 7" 7" Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l ESD: Class 1B (Passes 500V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. Pin Description Pin # 1 2 3 4 Function B a se GND & Emi tter C ollector B a se P i n C onnecti on to ground. Use vi a holes to reduce lead i nductance. Place vi as as close to ground leads as possi ble. C ollector Pi n D escription GND & Emi tter Same as Pi n 2 Part Identification Marking 4 4 XA3B 2 A3BZ 3 Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane 1 2 3 1 2 1 2 1 3 3 Plated Thru Holes (0.020" DIA) See Application Note AN-075 for Package Outline Drawing Machine Screws (Optional) SXA-389B 303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102915 Rev D 8 |
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